? 2013 ixys corporation, all rights reserved xpt tm 650v igbt genx3 tm w/ sonic diode v ces = 650v i c110 = 75a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.3v t fi(typ) = 50ns symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 170 a i lrms terminal current limit 160 a i c110 t c = 110c 75 a i f110 t c = 110c 62 a i cm t c = 25c, 1ms 360 a i a t c = 25c 30 a e as t c = 25c 300 mj ssoa v ge = 15v, t vj = 150c, r g = 3 ? i cm = 150 a (rbsoa) clamped inductive load v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 8 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 750 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6g ds100573a(7/14) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 50 ? a t j = 150 ? c 4 ma i ges v ce = 0v, v ge = ? 20v ???????????????? 100 na v ce(sat) i c = 60a, v ge = 15v, note 1 1.8 2.3 v t j = 150 ? c 2.2 v features ? international standard package ? optimized for 20-60khz switching ? square rbsoa ? avalanche rated ? short circuit capability ? high current handling capability ? anti-parallel sonic diode advantages ? high power density ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts extreme light punch through igbt for 20-60khz switching IXYH75N65C3H1 g = gate c = collector e = emitter tab = collector to-247 ad g c e tab preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXYH75N65C3H1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 25 42 s c ie s 3450 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 307 pf c res 70 pf q g(on) 123 nc q ge i c = 75a, v ge = 15v, v ce = 0.5 ? v ces 24 nc q gc 60 nc t d(on) 27 ns t ri 67 ns e on 2.8 mj t d(off) 93 ns t fi 50 ns e of f 1.0 mj t d(on) 26 ns t ri 57 ns e on 3.3 mj t d(off) 108 ns t fi 58 ns e off 1.3 mj r thjc 0.20 c/w r thcs 0.21 c/w notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 150c i c = 60a, v ge = 15v v ce = 400v, r g = 3 note 2 inductive load, t j = 25c i c = 60a, v ge = 15v v ce = 400v, r g = 3 ? note 2 1 - gate 2,4 - collector 3 - emitter to-247 (ixyh) outline reverse sonic diode (frd) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 50a, v ge = 0v, note 1 2.5 v t j = 150c 1.8 v i rm t j = 150c 45 a t rr t j = 150c 150 ns r thjc 0.45 c/w i f = 50a, v ge = 0v, -di f /dt = 900a/ s, v r = 300v prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved IXYH75N65C3H1 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 01234 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 6v 5v 8v 9v 7v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 5 10 15 20 v ce - volts i c - amperes v ge = 15v 13v 7v 9v 6v 8v 12v 11v 10v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 012345 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 9v 7v 8v 5v 6v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 75a i c = 37.5a i c = 150a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 0 1 2 3 4 5 6 7 8 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 150a t j = 25oc 75a 37.5a fig. 6. input admittance 0 20 40 60 80 100 120 23456789 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH75N65C3H1 fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. maximum transient thermal impedance a a sss 0.5 fig. 7. transconductance 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 3 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20406080100120 q g - nanocoulombs v ge - volts v ce = 325v i c = 75a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res
? 2013 ixys corporation, all rights reserved IXYH75N65C3H1 fig. 12. inductive switching energy loss vs. gate resistance 0 0.5 1 1.5 2 2.5 3 3.5 3 6 9 12 15 18 21 24 27 30 33 r g - ohms e off - millijoules 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 15. inductive turn-off switching times v s. gate resistance 30 40 50 60 70 80 90 100 110 3 6 9 1215182124273033 r g - ohms t f i - nanoseconds 50 100 150 200 250 300 350 400 450 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 13. inductive switching energy loss vs. collector current 0 0.4 0.8 1.2 1.6 2 2.4 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes e off - millijoules 0 1 2 3 4 5 6 e on - millijoules e off e on - - - - r g = 3 ? ????? v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.5 1.5 2.5 3.5 4.5 5.5 6.5 e on - millijoules e off e on - - - - r g = 3 ? ???? v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 16. inductive turn-off switching times vs. collector current 10 20 30 40 50 60 70 80 90 100 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t f i - nanoseconds 70 80 90 100 110 120 130 140 150 160 t d(off) - nanoseconds t f i t d(off) - - - - r g = 3 ? ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 85 90 95 100 105 110 115 120 125 t d(off) - nanoseconds t f i t d(off) - - - - r g = 3 ? ? , v ge = 15v v ce = 400v i c = 80a i c = 40a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH75N65C3H1 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t r i - nanoseconds 22 23 24 25 26 27 28 29 t d(on) - nanoseconds t r i t d(on) - - - - r g = 3 ? ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 23 24 25 26 27 28 29 30 31 t d(on) - nanoseconds t r i t d(on) - - - - r g = 3 ? ? , v ge = 15v v ce = 400v i c = 80a i c = 40a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 3 6 9 1215182124273033 r g - ohms t r i - nanoseconds 10 20 30 40 50 60 70 80 90 100 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 80a i c = 40a fig. 21. maximum peak load current vs. frequency 0 10 20 30 40 50 60 70 80 90 100 10 100 1,000 f max - kilohertzs i c - amperes t j = 150oc t c = 75oc v ce = 400v v ge = 15v r g = 3 ? d = 0.5 square wave triangular wave
? 2013 ixys corporation, all rights reserved IXYH75N65C3H1 ixys ref: ixy_75n65c3(71-r47) 9-23-13 fig. 22. typ. forward characteristics 0 20 40 60 80 100 00.5 11.522.53 v f - [v] i f [a] t vj = 25oc t vj = 150oc fig. 23. typ. reverse recovery charge q rr vs. -di f /dt 0 2 4 6 8 10 400 600 800 1000 1200 1400 1600 -di f / dt [a/s] q rm [c] t vj = 150oc v r = 300v i f = 100a 25a 50a fig. 24. typ. peak reverse current i rm vs. -di f /dt 20 30 40 50 60 70 80 400 600 800 1000 1200 1400 1600 di f /dt [a/s] i rm [a] t vj = 150oc v r = 300v 25a 50a i f = 100a fig. 25. typ. recovery time t rr vs. -di f /dt 50 100 150 200 250 300 350 400 600 800 1000 1200 1400 1600 -di f /dt [a/s] t rr [ns] t vj = 150oc v r = 300v 50a 25a i f = 100a fig. 26. typ. recovery energy e rec vs. -di f /dt 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 400 600 800 1000 1200 1400 1600 -di f /dt [a/s] e rec [mj] t vj = 150oc v r = 300v 50a 25a i f = 100a fig. 27. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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